symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 36 i d @ t c = 70c continuous drain current, v gs @ 10v 31 a i dm pulsed drain current 140 p d @t c = 25c maximum power dissipation 47 w p d @t c = 70c maximum power dissipation 33 w linear derating factor 0.31 w/c t j , t stg junction and storage temperature range -55 to + 175 c www.irf.com 1 06/15/01 IRLR3714 irlu3714 smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 20v 20m ? 36a notes through are on page 10 absolute maximum ratings thermal resistance parameter typ. max. units r jc junction-to-case ??? 3.2 r ja junction-to-ambient ??? 50 r ja junction-to-ambient (pcb mount) ??? 110 applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power d-pak IRLR3714 i-pak irlu3714 pd - 94266 c/w
IRLR3714/irlu3714 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? showing the i sm pulsed source current integral reverse (body diode) ??? p-n junction diode. ??? ??? 1.3 v t j = 25 c, i s = 18a, v gs = 0v ??? 0.88 ??? t j = 125 c, i s = 18a, v gs = 0v t rr reverse recovery time ??? 35 53 ns t j = 25 c, i f = 18a, v r =10v q rr reverse recovery charge ??? 34 51 nc di/dt = 100a/s t rr reverse recovery time ??? 35 53 ns t j = 125 c, i f = 18a, v r =10v q rr reverse recovery charge ??? 35 53 nc di/dt = 100a/s parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/ c reference to 25 c, i d = 1ma ??? 15 20 v gs = 10v, i d = 18a ??? 21 28 v gs = 4.5v, i d = 14a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125 c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 72 mj i ar avalanche current ??? 14 a avalanche characteristics s d g diode characteristics a symbol parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? sv ds = 10v, i d = 14a q g total gate charge ??? 6.5 9.7 i d = 14a q gs gate-to-source charge ??? 1.8 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 2.9 ??? v gs = 4.5v q oss output gate charge ??? 7.1 ??? v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 8.7 ??? v dd = 10v t r rise time ??? 78 ??? i d = 14a t d(off) turn-off delay time ??? 10 ??? r g = 1.8 ? t f fall time ??? 4.5 ??? v gs = 4.5v c iss input capacitance ??? 670 ??? v gs = 0v c oss output capacitance ??? 470 ??? v ds = 10v c rss reverse transfer capacitance ??? 68 ??? pf ? = 1.0mhz v sd diode forward voltage static @ t j = 25 c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance 3 6 140 m ?
IRLR3714/irlu3714 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , drain-to-source current (a) 2.0v 20s pulse width tj = 25 c vgs top 15v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) 2.0v 20s pulse width tj = 175 c vgs top 15v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 36a 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , drain-to-source current ( ) t j = 25 c t j = 175 c v ds = 15v 20s pulse width
IRLR3714/irlu3714 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.0 1.0 2.0 3.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i sd , reverse drain current (a) t j = 25 c t j = 175 c v gs = 0v 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 4 8 12 16 20 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 14a v = 10v ds v = 16v ds
IRLR3714/irlu3714 www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 t , case temperature ( c ) i , drain current (a) c d limited by package
IRLR3714/irlu3714 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.9a 10a 14a
IRLR3714/irlu3714 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
IRLR3714/irlu3714 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). int ernational logo rect ifier 34 12 irfu120 916a lot code assembly example: with assembly t his is an irfr120 ye ar 9 = 1999 dat e code line a week 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number
IRLR3714/irlu3714 www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a te 2 - d r a in 3 - s o u r c e 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 c o n t r o llin g d im e n s io n : in c h . 3 c o n f o r m s t o je d e c o u tlin e t o-2 52a a . 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
IRLR3714/irlu3714 10 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25 c, l = 0.69 mh r g = 25 ? , i as = 14a. pulse width 400s; duty cycle 2%. notes: when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. calculated continuous current based on maximum allowable junction temperature; package limitation current is 30a data and specifications subject to change without notice. these products have been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/01 d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
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